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  • Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

    Series series Engineering (R0)
    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature ... Read more

    $89.09 USD