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  • Integrated Electronics on Aluminum Nitride

    Materials and Devices

    Series series Physics and Astronomy (R0)
    This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of ... Read more

    $188.09 USD